Part Details for BUK654R6-55C,127 by NXP Semiconductors
Overview of BUK654R6-55C,127 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BUK654R6-55C,127
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BUK654R6-55C - 100A, 55V, 0.008ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 31 |
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$0.6478 / $0.7621 | Buy Now |
Part Details for BUK654R6-55C,127
BUK654R6-55C,127 CAD Models
BUK654R6-55C,127 Part Data Attributes:
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BUK654R6-55C,127
NXP Semiconductors
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Datasheet
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BUK654R6-55C,127
NXP Semiconductors
BUK654R6-55C - N-channel TrenchMOS intermediate level FET TO-220 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-220 | |
Package Description | PLASTIC, SC-46, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT78A | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 263 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 204 W | |
Pulsed Drain Current-Max (IDM) | 524 A | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |