Part Details for BUK653R2-55C,127 by NXP Semiconductors
Overview of BUK653R2-55C,127 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| AMC1306M25EDWVR | Texas Instruments | Reinforced isolated modulator with -55C extended temperature range 8-SOIC -55 to 125 | |
| TPS62813MWRWYR | Texas Instruments | 2.75-V to 6-V, 3-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 | |
| TPS62810MWRWYR | Texas Instruments | 2.75-V to 6-V, 4-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
Price & Stock for BUK653R2-55C,127
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BUK653R2-55C - 120A, 55V, 0.0048ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3726 |
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$1.1000 / $1.2900 | Buy Now |
Part Details for BUK653R2-55C,127
BUK653R2-55C,127 CAD Models
BUK653R2-55C,127 Part Data Attributes
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BUK653R2-55C,127
NXP Semiconductors
Buy Now
Datasheet
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BUK653R2-55C,127
NXP Semiconductors
N-channel TrenchMOS intermediate level FET TO-220 3-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-220 | |
| Package Description | PLASTIC, SC-46, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT78A | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 724 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 306 W | |
| Pulsed Drain Current-Max (IDM) | 861 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |