There are no models available for this part yet.
Overview of BUK6507-55C by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| AMC1306M25EDWVR | Texas Instruments | Reinforced isolated modulator with -55C extended temperature range 8-SOIC -55 to 125 | |
| TPS62813MWRWYR | Texas Instruments | 2.75-V to 6-V, 3-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 | |
| TPS62810MWRWYR | Texas Instruments | 2.75-V to 6-V, 4-A step-down converter in a 2-mm x 3-mm QFN package with -55C extended temperature 9-VQFN-HR -55 to 150 |
CAD Models for BUK6507-55C by NXP Semiconductors
Part Data Attributes for BUK6507-55C by NXP Semiconductors
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Part Package Code
|
TO-220AB
|
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
unknown
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|
ECCN Code
|
EAR99
|
|
Avalanche Energy Rating (Eas)
|
128 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
55 V
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|
Drain Current-Max (ID)
|
100 A
|
|
Drain-source On Resistance-Max
|
0.0105 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-220AB
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
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3
|
|
Operating Mode
|
ENHANCEMENT MODE
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|
Operating Temperature-Max
|
175 °C
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|
Package Body Material
|
PLASTIC/EPOXY
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|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
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|
Pulsed Drain Current-Max (IDM)
|
405 A
|
|
Qualification Status
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Not Qualified
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|
Surface Mount
|
NO
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|
Terminal Finish
|
Tin (Sn)
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|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
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|
Transistor Element Material
|
SILICON
|
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