Part Details for BUK6213-30A by NXP Semiconductors
Overview of BUK6213-30A by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BUK6213-30A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 64 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1891 |
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$0.3750 / $0.9000 | Buy Now |
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Chip1Cloud | MOSFET N-CH 30V 55A DPAK | 18815 |
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RFQ |
Part Details for BUK6213-30A
BUK6213-30A CAD Models
BUK6213-30A Part Data Attributes:
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BUK6213-30A
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
BUK6213-30A
NXP Semiconductors
TRANSISTOR 55 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | TO-252 | |
| Package Description | PLASTIC, SC-63, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 267 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 102 W | |
| Pulsed Drain Current-Max (IDM) | 257 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |