Datasheets
BUK553-60A by:

TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Part Details for BUK553-60A by NXP Semiconductors

Overview of BUK553-60A by NXP Semiconductors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Available Datasheets

Part # Manufacturer Description Datasheet
LTM4680IY Analog Devices Dual 30A, Single 60A µM Reg
LTM4680IY#PBF Analog Devices Dual 30A, Single 60A µM Reg
LTM4680EY#PBF Analog Devices Dual 30A, Single 60A µM Reg

Part Details for BUK553-60A

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BUK553-60A Part Data Attributes

BUK553-60A NXP Semiconductors
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BUK553-60A NXP Semiconductors TRANSISTOR 21 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 160 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 195 ns
Turn-on Time-Max (ton) 150 ns

Alternate Parts for BUK553-60A

This table gives cross-reference parts and alternative options found for BUK553-60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK553-60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTP15N05L Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK553-60A vs MTP15N05L
RFD14N05_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN Fairchild Semiconductor Corporation BUK553-60A vs RFD14N05_NL
BUZ71L Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUK553-60A vs BUZ71L
MTP15N05EL 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB onsemi BUK553-60A vs MTP15N05EL
RFD14N05L 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, 3 PIN Rochester Electronics LLC BUK553-60A vs RFD14N05L
RFD14N05 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUK553-60A vs RFD14N05
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUK553-60A vs BUZ71L
RFP14N05L 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUK553-60A vs RFP14N05L
RFD14N05_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251AA, 3 PIN Rochester Electronics LLC BUK553-60A vs RFD14N05_NL
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUK553-60A vs RFD14N06L
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUK553-60A vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation BUK553-60A vs HUF76429D3ST
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier BUK553-60A vs IRFR024NTR
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation BUK553-60A vs 2SJ602-ZJ-AZ
2SJ174 20A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BUK553-60A vs 2SJ174
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUK553-60A vs RFP14N05L
MTD15N06VT4 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUK553-60A vs MTD15N06VT4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUK553-60A vs BUZ71
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUK553-60A vs RFD14N06L
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor BUK553-60A vs HUF75309D3ST

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