There are no models available for this part yet.
Overview of BUK463-60A by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| LTM4680IY | Analog Devices | Dual 30A, Single 60A µM Reg | |
| LTM4680IY#PBF | Analog Devices | Dual 30A, Single 60A µM Reg | |
| LTM4680EY#PBF | Analog Devices | Dual 30A, Single 60A µM Reg |
CAD Models for BUK463-60A by NXP Semiconductors
Part Data Attributes for BUK463-60A by NXP Semiconductors
|
|
|
|---|---|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.29.00.95
|
|
Avalanche Energy Rating (Eas)
|
50 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
22 A
|
|
Drain-source On Resistance-Max
|
0.08 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
160 pF
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation Ambient-Max
|
75 W
|
|
Pulsed Drain Current-Max (IDM)
|
88 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Max (toff)
|
170 ns
|
|
Turn-on Time-Max (ton)
|
75 ns
|
Alternate Parts for BUK463-60A
This table gives cross-reference parts and alternative options found for BUK463-60A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK463-60A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFZ24NSTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | BUK463-60A vs IRFZ24NSTRL |
| IRFZ24NSPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | BUK463-60A vs IRFZ24NSPBF |
| AUIRFZ24NSTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Infineon Technologies AG | BUK463-60A vs AUIRFZ24NSTRL |
| FS10VS-06 | Power Field-Effect Transistor, 10A I(D), 60V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | BUK463-60A vs FS10VS-06 |
| AUIRFZ24NSTRR | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | BUK463-60A vs AUIRFZ24NSTRR |
| IRFZ24NSTRR | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | BUK463-60A vs IRFZ24NSTRR |
| IRFZ24NSTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | BUK463-60A vs IRFZ24NSTRRPBF |
| IRFZ24NS | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | BUK463-60A vs IRFZ24NS |
| IRFZ24NSPBF | Power Field-Effect Transistor, | Infineon Technologies AG | BUK463-60A vs IRFZ24NSPBF |