Datasheets
BU4522AF by:

10A, 800V, NPN, Si, POWER TRANSISTOR

Part Details for BU4522AF by NXP Semiconductors

Overview of BU4522AF by NXP Semiconductors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for BU4522AF

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BU4522AF Part Data Attributes

BU4522AF NXP Semiconductors
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BU4522AF NXP Semiconductors 10A, 800V, NPN, Si, POWER TRANSISTOR
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 10 A
Collector-Emitter Voltage-Max 800 V
Configuration SINGLE
DC Current Gain-Min (hFE) 4.2
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 45 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BU4522AF

This table gives cross-reference parts and alternative options found for BU4522AF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BU4522AF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MJE13071-DR6280 5A, 450V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation BU4522AF vs MJE13071-DR6280
2SC4765 TRANSISTOR 5 A, 600 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power Toshiba America Electronic Components BU4522AF vs 2SC4765
MJE8502A Power Bipolar Transistor, 5A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Motorola Semiconductor Products BU4522AF vs MJE8502A
2N6259 Power Bipolar Transistor, 16A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, Spectrum Control BU4522AF vs 2N6259
2N5345 1A, 300V, NPN, Si, POWER TRANSISTOR, TO-66, TO-66, 2 PIN TT Electronics Power and Hybrid / Semelab Limited BU4522AF vs 2N5345
MJE13070-DR6259 5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB Intersil Corporation BU4522AF vs MJE13070-DR6259
2N5884.MOD Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN TT Electronics Resistors BU4522AF vs 2N5884.MOD
BUJ303AX 5A, 500V, NPN, Si, POWER TRANSISTOR, PLASTIC, SOT-186A, 3 PIN NXP Semiconductors BU4522AF vs BUJ303AX
MJE3055TD1 Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin Motorola Semiconductor Products BU4522AF vs MJE3055TD1
2SC4107L-RC Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN SANYO Electric Co Ltd BU4522AF vs 2SC4107L-RC

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