Datasheets
BTS282ZE3180AATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN

Part Details for BTS282ZE3180AATMA2 by Infineon Technologies AG

Overview of BTS282ZE3180AATMA2 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for BTS282ZE3180AATMA2

Part # Distributor Description Stock Price Buy
DISTI # 13AC8357
Newark Mosfet, Aec-Q101, N-Ch, 49V, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:49V, On Resistance Rds(On):0.0058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Infineon BTS282ZE3180AATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $6.7900
  • 10 $6.1400
  • 25 $5.7800
  • 50 $5.4300
  • 100 $5.0800
  • 250 $4.7500
  • 500 $4.4200
$4.4200 / $6.7900 Buy Now
DISTI # BTS282ZE3180AATMA2TR-ND
DigiKey MOSFET N-CH 49V 80A TO263-7 Min Qty: 1000 Lead time: 89 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 1,000 $3.7034
  • 2,000 $3.4702
$3.4702 / $3.7034 Buy Now
DISTI # BTS282ZE3180AATMA2
Avnet Americas Trans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R - Tape and Reel (Alt: BTS282ZE3180AATMA2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $4.7055
  • 2,000 $4.5629
  • 4,000 $4.4203
  • 6,000 $4.2777
  • 8,000 $4.1351
  • 10,000 $3.9925
  • 100,000 $3.8499
$3.8499 / $4.7055 Buy Now
Future Electronics Single N-Channel 49 V 6.5 mOhm 155 nC Enhancement Mode Speed TEMPFET® - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $4.6200
$4.6200 Buy Now
Rochester Electronics BTS282 - TEMPFET, Automotive Low-Side Temperature Switch RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 968
  • 1 $4.1600
  • 25 $4.0800
  • 100 $3.9100
  • 500 $3.7400
  • 1,000 $3.5400
$3.5400 / $4.1600 Buy Now
DISTI # BTS282ZE3180A
TME IC: power switch, low-side, 36A, Ch: 1, N-Channel, SMD, PG-TO263-7-1 Min Qty: 1 0
  • 1 $5.7500
  • 3 $5.0900
  • 10 $4.5700
  • 50 $4.2600
$4.2600 / $5.7500 RFQ
DISTI # SP000910848
EBV Elektronik Trans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R (Alt: SP000910848) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BTS282ZE3180AATMA2

BTS282ZE3180AATMA2 CAD Models

BTS282ZE3180AATMA2 Part Data Attributes:

BTS282ZE3180AATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BTS282ZE3180AATMA2 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 7 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 49 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BTS282ZE3180AATMA2

This table gives cross-reference parts and alternative options found for BTS282ZE3180AATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS282ZE3180AATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BTS282ZE3180AATMA1 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN Infineon Technologies AG BTS282ZE3180AATMA2 vs BTS282ZE3180AATMA1
BTS282ZE-3180A Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN Infineon Technologies AG BTS282ZE3180AATMA2 vs BTS282ZE-3180A
BTS282ZE3230XK Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN Infineon Technologies AG BTS282ZE3180AATMA2 vs BTS282ZE3230XK
BTS282ZE-3230 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN Infineon Technologies AG BTS282ZE3180AATMA2 vs BTS282ZE-3230

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