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Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8357
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Newark | Mosfet, Aec-Q101, N-Ch, 49V, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:49V, On Resistance Rds(On):0.0058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power Rohs Compliant: Yes |Infineon BTS282ZE3180AATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$4.4200 / $6.7900 | Buy Now |
DISTI #
BTS282ZE3180AATMA2TR-ND
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DigiKey | MOSFET N-CH 49V 80A TO263-7 Min Qty: 1000 Lead time: 89 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$3.4702 / $3.7034 | Buy Now |
DISTI #
BTS282ZE3180AATMA2
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Avnet Americas | Trans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R - Tape and Reel (Alt: BTS282ZE3180AATMA2) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$3.8499 / $4.7055 | Buy Now |
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Future Electronics | Single N-Channel 49 V 6.5 mOhm 155 nC Enhancement Mode Speed TEMPFET® - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$4.6200 | Buy Now |
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Rochester Electronics | BTS282 - TEMPFET, Automotive Low-Side Temperature Switch RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 968 |
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$3.5400 / $4.1600 | Buy Now |
DISTI #
BTS282ZE3180A
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TME | IC: power switch, low-side, 36A, Ch: 1, N-Channel, SMD, PG-TO263-7-1 Min Qty: 1 | 0 |
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$4.2600 / $5.7500 | RFQ |
DISTI #
SP000910848
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EBV Elektronik | Trans MOSFET N-CH 49V 80A 7-Pin TO-263 T/R (Alt: SP000910848) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BTS282ZE3180AATMA2
Infineon Technologies AG
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Datasheet
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Compare Parts:
BTS282ZE3180AATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-263, 7 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 2000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | |
DS Breakdown Voltage-Min | 49 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G7 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BTS282ZE3180AATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS282ZE3180AATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BTS282ZE3180AATMA1 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | BTS282ZE3180AATMA2 vs BTS282ZE3180AATMA1 |
BTS282ZE-3180A | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN | Infineon Technologies AG | BTS282ZE3180AATMA2 vs BTS282ZE-3180A |
BTS282ZE3230XK | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN | Infineon Technologies AG | BTS282ZE3180AATMA2 vs BTS282ZE3230XK |
BTS282ZE-3230 | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-220, 7 PIN | Infineon Technologies AG | BTS282ZE3180AATMA2 vs BTS282ZE-3230 |