Datasheets
BTS100E3045A by:

Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

Part Details for BTS100E3045A by Infineon Technologies AG

Overview of BTS100E3045A by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for BTS100E3045A

Part # Distributor Description Stock Price Buy
ComSIT USA SMART HIGHSIDE POWER SWITCH TEMPFET Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Stock EU - 798
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for BTS100E3045A

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BTS100E3045A Part Data Attributes

BTS100E3045A Infineon Technologies AG
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BTS100E3045A Infineon Technologies AG Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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