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Transistors Power Field-Effect Transistors BSZ165N04NSG

BSZ165N04NSG
Infineon Technologies AG
Description: Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8

Overview of BSZ165N04NSG by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 1 listing )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 1 option )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for BSZ165N04NSG by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 31A I(D), 40V, 0.0165OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 19
  • 1 $0.6000
  • 9 $0.5000
$0.5000 / $0.6000 Buy Now

CAD Models for BSZ165N04NSG by Infineon Technologies AG
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Part Data Attributes for BSZ165N04NSG by Infineon Technologies AG
Parametric Data

BSZ165N04NSG
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-F8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
5 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
31 A
Drain-source On Resistance-Max
0.0165 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-F8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25 W
Pulsed Drain Current-Max (IDM)
124 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
FLAT
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. BSZ165N04NSG
    Infineon Technologies AG
    Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8
    VS

Alternate Parts for BSZ165N04NSG

This table gives cross-reference parts and alternative options found for BSZ165N04NSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ165N04NSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSZ165N04NSGATMA1 Power Field-Effect Transistor, 31A I(D), 40V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-8 Infineon Technologies AG BSZ165N04NSG vs BSZ165N04NSGATMA1

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