Part Details for BSZ130N03LSGATMA1 by Infineon Technologies AG
Overview of BSZ130N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ130N03LSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2543
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Newark | Mosfet, N Ch, 35A, 30V, Pg-Tsdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0108Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:-, Power Rohs Compliant: Yes |Infineon BSZ130N03LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 210 |
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$0.2890 / $0.7590 | Buy Now |
DISTI #
BSZ130N03LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 10A/35A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
28114 In Stock |
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$0.2416 / $0.7300 | Buy Now |
DISTI #
BSZ130N03LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ130N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.1780 / $0.1909 | Buy Now |
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Future Electronics | Single N-Channel 30 V 13 mOhm 9.5 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.2350 / $0.2550 | Buy Now |
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Future Electronics | Single N-Channel 30 V 13 mOhm 9.5 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.2350 / $0.2550 | Buy Now |
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Future Electronics | Single N-Channel 30 V 13 mOhm 9.5 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.2350 / $0.2550 | Buy Now |
DISTI #
BSZ130N03LSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 28A, 25W, PG-TSDSON-8 Min Qty: 3 | 0 |
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$0.2200 / $0.3920 | RFQ |
DISTI #
SP000278810
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EBV Elektronik | Trans MOSFET N-CH 30V 35A 8-Pin TSDSON T/R (Alt: SP000278810) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BSZ130N03LSGATMA1
BSZ130N03LSGATMA1 CAD Models
BSZ130N03LSGATMA1 Part Data Attributes:
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BSZ130N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ130N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PDSO-N5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 9 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSZ130N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSZ130N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ130N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
DMN3016LSS-13 | Power Field-Effect Transistor, 9.3A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Diodes Incorporated | BSZ130N03LSGATMA1 vs DMN3016LSS-13 |