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Transistors / Power Field-Effect Transistors / BSZ110N06NS3GATMA1
Datasheets
BSZ110N06NS3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ110N06NS3GATMA1 by Infineon Technologies AG

Overview of BSZ110N06NS3GATMA1 by Infineon Technologies AG

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Price & Stock for BSZ110N06NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3364
Newark Mosfet, N Channel, 60V, 20A, 8Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSZ110N06NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2382
  • 1 $0.7700
  • 10 $0.6580
  • 100 $0.5100
  • 500 $0.4430
  • 1,000 $0.3520
  • 2,500 $0.3450
  • 10,000 $0.3350
$0.3350 / $0.7700 Buy Now
DISTI # BSZ110N06NS3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 20A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 11130
In Stock
  • 1 $0.8600
  • 10 $0.7040
  • 100 $0.5474
  • 500 $0.4640
  • 1,000 $0.3780
  • 2,000 $0.3558
  • 5,000 $0.3389
  • 10,000 $0.3232
  • 25,000 $0.3226
$0.3226 / $0.8600 Buy Now
DISTI # BSZ110N06NS3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 20A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ110N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.3442
  • 10,000 $0.3334
  • 20,000 $0.3226
  • 30,000 $0.3119
  • 40,000 $0.3011
$0.3011 / $0.3442 Buy Now
Future Electronics Single N-Channel 60 V 11 mOhm 25 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 10000
Reel
  • 5,000 $0.3000
  • 10,000 $0.2950
  • 15,000 $0.2900
  • 20,000 $0.2850
$0.2850 / $0.3000 Buy Now
Future Electronics Single N-Channel 60 V 11 mOhm 25 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 5000
Reel
  • 5,000 $0.2950
  • 10,000 $0.2900
  • 15,000 $0.2850
$0.2850 / $0.2950 Buy Now
Rochester Electronics BSZ110N06 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Active Min Qty: 1 10
  • 1 $0.3764
  • 25 $0.3689
  • 100 $0.3538
  • 500 $0.3388
  • 1,000 $0.3199
$0.3199 / $0.3764 Buy Now
Ameya Holding Limited Single N-Channel 60 V 11 mOhm 25 nC OptiMOS™ Power Mosfet - TSDSON-8 44764
RFQ
DISTI # SP000453676
EBV Elektronik Trans MOSFET N-CH 60V 20A 8-Pin TSDSON T/R (Alt: SP000453676) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 60 V 11 mOhm 25 nC OptiMOS� Power Mosfet - TSDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 20000
  • 5,000 $0.4071
  • 20,000 $0.3800
$0.3800 / $0.4071 Buy Now

Part Details for BSZ110N06NS3GATMA1

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BSZ110N06NS3GATMA1 Part Data Attributes:

Parametric Data
BSZ110N06NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ110N06NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PDSO-N5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSZ110N06NS3GATMA1

This table gives cross-reference parts and alternative options found for BSZ110N06NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ110N06NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTTFS5820NLTWG Single N-Channel Power MOSFET 60V, 37A, 11.5mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL onsemi BSZ110N06NS3GATMA1 vs NTTFS5820NLTWG
BSF110N06NT3G Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 Infineon Technologies AG BSZ110N06NS3GATMA1 vs BSF110N06NT3G
BSZ110N06NS3G Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG BSZ110N06NS3GATMA1 vs BSZ110N06NS3G
BSF110N06NT3GXUMA1 Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 Infineon Technologies AG BSZ110N06NS3GATMA1 vs BSF110N06NT3GXUMA1
FDP14AN06LA0_NL Power Field-Effect Transistor, 10A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 Fairchild Semiconductor Corporation BSZ110N06NS3GATMA1 vs FDP14AN06LA0_NL

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