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Part Details for BSZ097N04LSGATMA1 by Infineon Technologies AG
Overview of BSZ097N04LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BSZ097N04LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
60R2538
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Newark | Mosfet, N Channel, 40V, 40A, Pg-Tsdson, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Infineon BSZ097N04LSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.3710 / $0.9780 | Buy Now |
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DISTI #
BSZ097N04LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 12A/40A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6314 In Stock |
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$0.3108 / $0.9400 | Buy Now |
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DISTI #
BSZ097N04LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ097N04LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 45000 |
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$0.2901 / $0.3315 | Buy Now |
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DISTI #
726-BSZ097N04LSGATMA
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Mouser Electronics | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 RoHS: Compliant | 36446 |
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$0.3180 / $0.9400 | Buy Now |
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Future Electronics | Single N-Channel 40 V 9.7 mOhm 18 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 55000Reel |
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$0.2850 / $0.2950 | Buy Now |
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Future Electronics | Single N-Channel 40 V 9.7 mOhm 18 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.2850 / $0.2950 | Buy Now |
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Bristol Electronics | 10 |
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RFQ | ||
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Bristol Electronics | 555 |
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RFQ | ||
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Quest Components | 444 |
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$0.3920 / $0.9800 | Buy Now | |
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DISTI #
BSZ097N04LSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 40V, 40A, 35W, PG-TSDSON-8 Min Qty: 1 | 4975 |
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$0.3660 / $0.8610 | Buy Now |
Part Details for BSZ097N04LSGATMA1
BSZ097N04LSGATMA1 CAD Models
BSZ097N04LSGATMA1 Part Data Attributes:
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BSZ097N04LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ097N04LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-N5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0142 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Resources and Additional Insights for BSZ097N04LSGATMA1
Reference Designs related to BSZ097N04LSGATMA1
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