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Transistors / Power Field-Effect Transistors / BSZ075N08NS5ATMA1
Datasheets
BSZ075N08NS5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 40A I(D), 80V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8FL, 8 PIN

Part Details for BSZ075N08NS5ATMA1 by Infineon Technologies AG

Results Overview of BSZ075N08NS5ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BSZ075N08NS5ATMA1 Information

BSZ075N08NS5ATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSZ075N08NS5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 12AC9456
Newark Mosfet, N-Ch, 80V, 40A, 150Deg C, 69W, Channel Type:N Channel, Drain Source Voltage Vds:80V, Cont... inuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSZ075N08NS5ATMA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 5050
  • 1 $0.4890
  • 10 $0.4890
  • 25 $0.4890
  • 50 $0.4890
  • 100 $0.4890
  • 250 $0.4890
  • 500 $0.4890
  • 1,000 $0.4890
$0.4890 Buy Now
DISTI # BSZ075N08NS5ATMA1CT-ND
DigiKey MOSFET N-CH 80V 40A 8TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 63866
In Stock
  • 1 $1.0800
  • 10 $0.7940
  • 100 $0.6793
  • 500 $0.6643
  • 1,000 $0.6433
  • 2,000 $0.6191
  • 5,000 $0.5879
$0.5879 / $1.0800 Buy Now
DISTI # 12AC9456
Avnet Americas Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 12A... C9456) more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Ammo Pack 5050 Partner Stock
  • 1 $0.9260
  • 10 $0.9220
  • 25 $0.8690
  • 50 $0.8170
  • 100 $0.7640
$0.7640 / $0.9260 Buy Now
DISTI # BSZ075N08NS5ATMA1
Avnet Americas Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ075N08NS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4769
  • 10,000 $0.4714
  • 20,000 $0.4652
  • 30,000 $0.4597
  • 40,000 $0.4534
$0.4534 / $0.4769 Buy Now
DISTI # 726-BSZ075N08NS5ATMA
Mouser Electronics MOSFETs N-Ch 80V 40A TSDSON-8 RoHS: Compliant 71794
  • 1 $1.0600
  • 10 $0.7780
  • 100 $0.6660
  • 500 $0.6260
  • 1,000 $0.6110
  • 5,000 $0.5870
  • 10,000 $0.5850
$0.5850 / $1.0600 Buy Now
DISTI # 73928877
RS Transistor, MOSFET, N-channel normal level, power-transistor, 80V, Id 73A | Infineon BSZ075N08NS5ATM... A1 more RoHS: Compliant Min Qty: 5000 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 5,000 $0.7600
$0.7600 RFQ
Future Electronics Single N-Channel 80 V 7.5 mOhm 24 nC OptiMOS™ Power Mosfet - TSDSON-8 FL RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $0.5000
$0.5000 Buy Now
Future Electronics Single N-Channel 80 V 7.5 mOhm 24 nC OptiMOS™ Power Mosfet - TSDSON-8 FL RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $0.5000
$0.5000 Buy Now
Bristol Electronics   285
RFQ
Rochester Electronics 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 110686
  • 1 $0.6532
  • 25 $0.6401
  • 100 $0.6140
  • 500 $0.5879
  • 1,000 $0.5552
$0.5552 / $0.6532 Buy Now
DISTI # SMC-BSZ075N08NS5ATMA1
Sensible Micro Corporation Trans Mosfet N-Ch 80V 40A 8-Pin Tsdson Ep T/R RoHS: Compliant Min Qty: 5000 Lead time: 0 Weeks, 1 Days Date Code: 2222 Container: Tape & Reel 5000
  • 100 $1.9988
  • 500 $1.9475
  • 1,000 $1.8450
$1.8450 / $1.9988 RFQ
DISTI # SMC-BSZ075N08NS5ATMA1
Sensible Micro Corporation Trans Mosfet N-Ch 80V 40A 8-Pin Tsdson Ep T/R RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2229 Container: Tape & Reel 5000
  • 100 $1.9988
  • 500 $1.9475
  • 1,000 $1.8450
$1.8450 / $1.9988 RFQ
DISTI # SP001132454
EBV Elektronik Trans MOSFET NCH 80V 40A 8Pin TSDSON TR (Alt: SP001132454) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 42119
RFQ

Part Details for BSZ075N08NS5ATMA1

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BSZ075N08NS5ATMA1 Part Data Attributes

Parametric Data
BSZ075N08NS5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ075N08NS5ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 40A I(D), 80V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8FL, 8 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TSDSON-8FL, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 5 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 104 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

BSZ075N08NS5ATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSZ075N08NS5ATMA1 is -55°C to 175°C.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 4.5V and 10V, and the drain-source voltage (Vds) should be within the specified maximum rating of 80V.

  • A good PCB layout should ensure minimal inductance and resistance in the drain and source connections. Thermal management is critical; use a heat sink or thermal pad to maintain a junction temperature below 175°C.

  • Handle the device by the body or use an ESD wrist strap to prevent static electricity damage. Ensure the PCB has ESD protection components, such as TVS diodes or ESD arrays, to protect the MOSFET.

  • The recommended gate resistor value is typically between 10Ω and 100Ω, depending on the specific application and switching frequency.