Part Details for BSZ036NE2LSATMA1 by Infineon Technologies AG
Results Overview of BSZ036NE2LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (22 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSZ036NE2LSATMA1 Information
BSZ036NE2LSATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSZ036NE2LSATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2480781
|
Farnell | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 9658 |
|
$0.3014 / $1.1449 | Buy Now |
DISTI #
2480781RL
|
Farnell | MOSFET, N-CH, 25V, 40A, TSDSON-8 RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel | 9658 |
|
$0.3014 / $0.5370 | Buy Now |
DISTI #
BSZ036NE2LSATMA1CT-ND
|
DigiKey | MOSFET N-CH 25V 16A/40A TSDSON Min Qty: 1 Lead time: 18 Weeks Container: Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
39547 In Stock |
|
$0.2822 / $1.2000 | Buy Now |
DISTI #
BSZ036NE2LSATMA1
|
Avnet Americas | Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ036NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel |
5000 |
|
$0.2676 | Buy Now |
DISTI #
726-BSZ036NE2LSATMA1
|
Mouser Electronics | MOSFETs N-Ch 25V 40A TDSON-8 OptiMOS RoHS: Compliant | 11581 |
|
$0.2900 / $1.1200 | Buy Now |
DISTI #
E02:0323_03079012
|
Arrow Electronics | Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2440 | Europe - 10000 |
|
$0.2720 / $0.2749 | Buy Now |
DISTI #
V72:2272_06384642
|
Arrow Electronics | Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2218 Container: Cut Strips | Americas - 8024 |
|
$0.1149 / $0.4816 | Buy Now |
|
Future Electronics | Single N-Channel 25 V 3.6 mOhm 16 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel |
5000 Reel |
|
$0.2550 / $0.2600 | Buy Now |
|
Future Electronics | Single N-Channel 25 V 3.6 mOhm 16 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel |
0 Reel |
|
$0.2550 / $0.2600 | Buy Now |
DISTI #
85966790
|
Verical | Trans MOSFET N-CH 25V 16A 8-Pin TSDSON EP T/R Min Qty: 763 Package Multiple: 1 Date Code: 2201 | Americas - 17091 |
|
$0.4918 | Buy Now |
Part Details for BSZ036NE2LSATMA1
BSZ036NE2LSATMA1 CAD Models
BSZ036NE2LSATMA1 Part Data Attributes
|
BSZ036NE2LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSZ036NE2LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Select a part to compare: |
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TSDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 40 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.0051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSZ036NE2LSATMA1
This table gives cross-reference parts and alternative options found for BSZ036NE2LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ036NE2LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSZ036NE2LS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 16A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | BSZ036NE2LSATMA1 vs BSZ036NE2LS |
BSZ036NE2LSATMA1 Frequently Asked Questions (FAQ)
-
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to dissipate heat efficiently.
-
Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider using a thermistor or thermocouple to monitor the device temperature.
-
Handle the device in an ESD-protected environment, use ESD-safe packaging and tools, and ensure that all personnel handling the device are grounded using wrist straps or heel straps.
-
Use a logic analyzer or oscilloscope to monitor the device's input and output signals. Check the power supply voltage, decoupling capacitors, and PCB layout for any issues. Consult the datasheet and application notes for troubleshooting guidelines.
-
Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure that the device is properly aligned and secured during the soldering process.