Part Details for BSZ035N03MSGATMA1 by Infineon Technologies AG
Overview of BSZ035N03MSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BSZ035N03MSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97Y1268
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Newark | Mosfet, N-Ch, 30V, 40A, Pg-Tsdson-8, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0035Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, Power Rohs Compliant: Yes |Infineon BSZ035N03MSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.5410 / $1.2300 | Buy Now |
DISTI #
BSZ035N03MSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 18A/40A 8TSDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11625 In Stock |
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$0.4452 / $1.1800 | Buy Now |
DISTI #
BSZ035N03MSGATMA1
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Avnet Americas | Transistor MOSFET N-CH 30V 40A 8-Pin PG-TSDSON T/R - Tape and Reel (Alt: BSZ035N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.4148 / $0.4741 | Buy Now |
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Future Electronics | Single N-Channel 30 V 3.5 mOhm 56 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.4600 | Buy Now |
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Future Electronics | Single N-Channel 30 V 3.5 mOhm 56 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.4600 | Buy Now |
DISTI #
73518508
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Verical | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2336 | Americas - 60000 |
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$0.4886 | Buy Now |
DISTI #
69266398
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Verical | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R Min Qty: 35 Package Multiple: 1 Date Code: 2310 | Americas - 9765 |
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$0.5525 / $0.9025 | Buy Now |
DISTI #
73553860
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Verical | Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2346 | Americas - 5000 |
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$0.4078 / $0.4246 | Buy Now |
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Rochester Electronics | BSZ035N03 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 153 |
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$0.4406 / $0.5184 | Buy Now |
DISTI #
BSZ035N03MSGATMA1
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Avnet Americas | Transistor MOSFET N-CH 30V 40A 8-Pin PG-TSDSON T/R - Tape and Reel (Alt: BSZ035N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.4148 / $0.4741 | Buy Now |
Part Details for BSZ035N03MSGATMA1
BSZ035N03MSGATMA1 CAD Models
BSZ035N03MSGATMA1 Part Data Attributes:
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BSZ035N03MSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ035N03MSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TSDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.0043 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |