Part Details for BSZ019N03LSATMA1 by Infineon Technologies AG
Overview of BSZ019N03LSATMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Medical Imaging
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Entertainment and Gaming
Robotics and Drones
Price & Stock for BSZ019N03LSATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47Y8007
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Newark | Mosfet, N Ch, 30V, 149A, Tsdson-Fl-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:149A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSZ019N03LSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 417 |
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$0.7900 / $1.6600 | Buy Now |
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DISTI #
BSZ019N03LSATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 22A . 40A TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
89137 In Stock |
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$0.6727 / $1.1300 | Buy Now |
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DISTI #
BSZ019N03LSATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 22A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ019N03LSATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.6279 / $0.7176 | Buy Now |
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DISTI #
726-BSZ019N03LSATMA1
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Mouser Electronics | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS RoHS: Compliant | 9322 |
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$0.6650 / $1.4800 | Buy Now |
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Future Electronics | Single N-Channel 30 V 1.9 mOhm 44 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$0.6700 | Buy Now |
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Future Electronics | Single N-Channel 30 V 1.9 mOhm 44 nC OptiMOS™ Power Mosfet - TSDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.6700 | Buy Now |
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DISTI #
BSZ019N03LSATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 40A, 69W, PG-TSDSON-8 Min Qty: 1 | 0 |
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$0.8300 / $1.5800 | RFQ |
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Ameya Holding Limited | Min Qty: 50 | 4985 |
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$1.5314 / $1.9045 | Buy Now |
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Ameya Holding Limited | Single N-Channel 30 V 1.9 mOhm 44 nC OptiMOS™ Power Mosfet - TSDSON-8 | 7069 |
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RFQ | |
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DISTI #
SP000792362
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EBV Elektronik | Trans MOSFET N-CH 30V 22A 8-Pin TSDSON T/R (Alt: SP000792362) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for BSZ019N03LSATMA1
BSZ019N03LSATMA1 CAD Models
BSZ019N03LSATMA1 Part Data Attributes:
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BSZ019N03LSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ019N03LSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N3 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ019N03LSATMA1
This table gives cross-reference parts and alternative options found for BSZ019N03LSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ019N03LSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSZ0901NSATMA1 | Power Field-Effect Transistor, 22A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ019N03LSATMA1 vs BSZ0901NSATMA1 |