Datasheets
BSS308PE by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS308PE by Infineon Technologies AG

Overview of BSS308PE by Infineon Technologies AG

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for BSS308PE

Part # Distributor Description Stock Price Buy
DISTI # SMC-BSS308PE
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 68000
RFQ
Win Source Electronics OptiMOS™ P3 Small-Signal-Transistor 1327800
  • 295 $0.1700
  • 715 $0.1400
  • 1,115 $0.1350
  • 1,530 $0.1310
  • 1,970 $0.1270
  • 2,655 $0.1130
$0.1130 / $0.1700 Buy Now

Part Details for BSS308PE

BSS308PE CAD Models

BSS308PE Part Data Attributes:

BSS308PE Infineon Technologies AG
Buy Now Datasheet
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BSS308PE Infineon Technologies AG Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BSS308PE

This table gives cross-reference parts and alternative options found for BSS308PE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS308PE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS308PEH6327 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEH6327
BSS308PEL6327 Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEL6327
FDN360P_NL Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PE vs FDN360P_NL
FDN360PD87Z Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PE vs FDN360PD87Z
BSS308PEH6327XTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEH6327XTSA1
FDN360P PowerTrench MOSFET, Single P-Channel, 3000-REEL onsemi BSS308PE vs FDN360P
BSS308PEL6327HTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEL6327HTSA1
Part Number Description Manufacturer Compare
FDN360P 2000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC BSS308PE vs FDN360P
FDN360PD87Z Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PE vs FDN360PD87Z
BSS308PEL6327HTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEL6327HTSA1
FDN360P PowerTrench MOSFET, Single P-Channel, 3000-REEL onsemi BSS308PE vs FDN360P
FDN360P Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PE vs FDN360P
BSS308PEH6327 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEH6327
BSS308PEL6327 Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEL6327
FDN360P_NL Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PE vs FDN360P_NL
BSS308PEH6327XTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PE vs BSS308PEH6327XTSA1

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