-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for BSS126 by Infineon Technologies AG
Overview of BSS126 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BSS126
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
NexGen Digital | 1 |
|
RFQ | ||
|
|
Win Source Electronics | SIPMOS® Small-Signal-Transistor | 25000 |
|
$0.0735 / $0.0949 | Buy Now |
Part Details for BSS126
BSS126 CAD Models
BSS126 Part Data Attributes
|
|
BSS126
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSS126
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.021 A | |
| Drain-source On Resistance-Max | 500 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.5 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS126
This table gives cross-reference parts and alternative options found for BSS126. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS126, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS126SK-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | BSS126 vs BSS126SK-7 |
| BSS126L6327 | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS126 vs BSS126L6327 |
| BSS126E6906 | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS126 vs BSS126E6906 |
| BSS126L6327HTSA1 | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS126 vs BSS126L6327HTSA1 |
| BSS126_R1_00001 | Small Signal Field-Effect Transistor, | PanJit Semiconductor | BSS126 vs BSS126_R1_00001 |
| BSS126I | Power Field-Effect Transistor, | Infineon Technologies AG | BSS126 vs BSS126I |
| BSS126H6327XTSA2 | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS126 vs BSS126H6327XTSA2 |
| BSS126_R2_00001 | Small Signal Field-Effect Transistor, | PanJit Semiconductor | BSS126 vs BSS126_R2_00001 |
| BSS126H6327 | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS126 vs BSS126H6327 |