Part Details for BSS125E6325 by Siemens
Overview of BSS125E6325 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSS125E6325
BSS125E6325 CAD Models
BSS125E6325 Part Data Attributes
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BSS125E6325
Siemens
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Datasheet
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BSS125E6325
Siemens
Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | CYLINDRICAL, O-PBCY-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 0.1 A | |
Drain-source On Resistance-Max | 45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for BSS125E6325
This table gives cross-reference parts and alternative options found for BSS125E6325. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS125E6325, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS125E6288 | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | BSS125E6325 vs BSS125E6288 |
BSS125E6288 | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Infineon Technologies AG | BSS125E6325 vs BSS125E6288 |
BSS125E6325 | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Infineon Technologies AG | BSS125E6325 vs BSS125E6325 |
BSS125E6296 | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Infineon Technologies AG | BSS125E6325 vs BSS125E6296 |
BSS125E6296 | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | BSS125E6325 vs BSS125E6296 |