Part Details for BSS123E6327 by Siemens
Overview of BSS123E6327 by Siemens
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSS123E6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2337 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 3000 |
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$0.0360 / $0.0800 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 2722 |
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$0.0360 / $0.0800 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-23 | 2192 |
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$0.1440 / $0.4800 | Buy Now |
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ComSIT USA | SIPMOS SMALL-SIGNAL TRANSISTOR Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 3000 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 1500 |
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$0.3800 / $0.5800 | Buy Now |
Part Details for BSS123E6327
BSS123E6327 CAD Models
BSS123E6327 Part Data Attributes:
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BSS123E6327
Siemens
Buy Now
Datasheet
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Compare Parts:
BSS123E6327
Siemens
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.36 W | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Reference Standard | IEC-68-1 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSS123E6327
This table gives cross-reference parts and alternative options found for BSS123E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS123TC | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Zetex / Diodes Inc | BSS123E6327 vs BSS123TC |
BSS123E6327XT | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123E6327 vs BSS123E6327XT |
BSS123-7 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | BSS123E6327 vs BSS123-7 |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSS123E6327 vs BSS123 |
BSS123E-6327 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123E6327 vs BSS123E-6327 |
BSS123L6433HTMA1 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123E6327 vs BSS123L6433HTMA1 |
BSS123-G | Small Signal Field-Effect Transistor | onsemi | BSS123E6327 vs BSS123-G |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | BSS123E6327 vs BSS123 |
BSS123/S62Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123E6327 vs BSS123/S62Z |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | WEITRON INTERNATIONAL CO., LTD. | BSS123E6327 vs BSS123 |