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Small Signal Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-BSS123_R1_00001
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Mouser Electronics | MOSFET 100V N-Channel Enhancement Mode MOSFET-ESD Protected RoHS: Compliant | 9404 |
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$0.0210 / $0.2100 | Buy Now |
DISTI #
BSS123-R1
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TME | Transistor: N-MOSFET, unipolar, 100V, 170mA, Idm: 0.68A, 500mW Min Qty: 15 | 8915 |
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$0.0277 / $0.0534 | Buy Now |
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NAC | 100V N-Channel Enhancement Mode MOSFET-ESD Protected RoHS: Compliant Min Qty: 1 Package Multiple: 3000 Container: Reel | 659300 |
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$0.0270 / $0.0300 | Buy Now |
DISTI #
BSS123_R1_00001
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Avnet Silica | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R (Alt: BSS123_R1_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Buy Now |
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BSS123_R1_00001
PanJit Semiconductor
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Datasheet
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BSS123_R1_00001
PanJit Semiconductor
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7.8 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Reference Standard | IEC-61249; MIL-STD-750 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS123_R1_00001. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123_R1_00001, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS119L6433HTMA1 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123_R1_00001 vs BSS119L6433HTMA1 |
BSS100LTA | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Calogic Inc | BSS123_R1_00001 vs BSS100LTA |
BSS100LTR2 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Calogic Inc | BSS123_R1_00001 vs BSS100LTR2 |
BSS119L6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123_R1_00001 vs BSS119L6433 |
BSS100LTR3 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Calogic Inc | BSS123_R1_00001 vs BSS100LTR3 |
BSS100LTR4 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Calogic Inc | BSS123_R1_00001 vs BSS100LTR4 |
BSS119H6327 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123_R1_00001 vs BSS119H6327 |
BSS119L6327HTSA1 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123_R1_00001 vs BSS119L6327HTSA1 |
BSS123_R2_00001 | Small Signal Field-Effect Transistor | PanJit Semiconductor | BSS123_R1_00001 vs BSS123_R2_00001 |
BSS123LT7G | Power MOSFET 170 mA, 100 V, N-Channel SOT-23, 3500-REEL | onsemi | BSS123_R1_00001 vs BSS123LT7G |