Datasheets
BSS123 by:

150mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-3

Part Details for BSS123 by NXP Semiconductors

Overview of BSS123 by NXP Semiconductors

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Price & Stock for BSS123

Part # Distributor Description Stock Price Buy
Bristol Electronics   9000
RFQ
Bristol Electronics   6531
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-236AB 1130
  • 1 $0.1240
  • 109 $0.0775
  • 646 $0.0558
$0.0558 / $0.1240 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 7200
  • 1 $0.3100
  • 359 $0.0930
  • 4,302 $0.0620
$0.0620 / $0.3100 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 1120
  • 1 $0.8500
  • 119 $0.4250
  • 472 $0.3400
$0.3400 / $0.8500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 5224
  • 1 $1.5500
  • 1,291 $0.5425
  • 2,766 $0.4650
$0.4650 / $1.5500 Buy Now
ComSIT USA N-CHANNEL TRENCHMOS TRANSISTOR LOGIC LEVEL FET Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 5940
RFQ

Part Details for BSS123

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BSS123 Part Data Attributes:

BSS123 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
BSS123 NXP Semiconductors 150mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer NXP
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.15 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Reference Standard IEC-134
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123

This table gives cross-reference parts and alternative options found for BSS123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS123TRL TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123 vs BSS123TRL
BSS123,215 BSS123 - 100 V, N-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia BSS123 vs BSS123,215
BSS123-TAPE-7 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123 vs BSS123-TAPE-7
BSS123T/R Small Signal Field-Effect Transistor Nexperia BSS123 vs BSS123T/R
BSS123TRL13 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123 vs BSS123TRL13
BSS123 Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BSS123 vs BSS123
933946340215 Small Signal Field-Effect Transistor Nexperia BSS123 vs 933946340215
BSS123T/R TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal NXP Semiconductors BSS123 vs BSS123T/R
Part Number Description Manufacturer Compare
TN5325N3-G Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSS123 vs TN5325N3-G
TN0104N3-G Small Signal Field-Effect Transistor, 0.45A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSS123 vs TN0104N3-G
VN0106N3-G Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN Supertex Inc BSS123 vs VN0106N3-G
PMV117EN TRANSISTOR 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSS123 vs PMV117EN
PMV117EN,215 N-channel TrenchMOS logic level FET TO-236 3-Pin NXP Semiconductors BSS123 vs PMV117EN,215
BSH112 TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, MINIATURE, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSS123 vs BSH112
TN0610N3-G Small Signal Field-Effect Transistor, 0.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN, TO-92(N3), 3 PIN Supertex Inc BSS123 vs TN0610N3-G
TP5322K1-G Small Signal Field-Effect Transistor, 0.12A I(D), 220V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, GREEN PACKAGE-3 Supertex Inc BSS123 vs TP5322K1-G
TP2104N3-G Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSS123 vs TP2104N3-G
2N6660 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix BSS123 vs 2N6660

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