Part Details for BSS123-F169 by onsemi
Overview of BSS123-F169 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSS123-F169
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BSS123 - Small Signal Field-Effect Transistor, 0.17A, 100V, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 112662 |
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$0.0377 / $0.0443 | Buy Now |
Part Details for BSS123-F169
BSS123-F169 CAD Models
BSS123-F169 Part Data Attributes:
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BSS123-F169
onsemi
Buy Now
Datasheet
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Compare Parts:
BSS123-F169
onsemi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | SOT-23, 3 PIN | |
| Manufacturer Package Code | 318-08 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.4 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSS123-F169
This table gives cross-reference parts and alternative options found for BSS123-F169. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-F169, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSS123TC | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Zetex / Diodes Inc | BSS123-F169 vs BSS123TC |
| BSS123E6327XT | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123-F169 vs BSS123E6327XT |
| BSS123-7 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | BSS123-F169 vs BSS123-7 |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSS123-F169 vs BSS123 |
| BSS123E-6327 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123-F169 vs BSS123E-6327 |
| BSS123L6433HTMA1 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123-F169 vs BSS123L6433HTMA1 |
| BSS123-G | Small Signal Field-Effect Transistor | onsemi | BSS123-F169 vs BSS123-G |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | BSS123-F169 vs BSS123 |
| BSS123/S62Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123-F169 vs BSS123/S62Z |
| BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | WEITRON INTERNATIONAL CO., LTD. | BSS123-F169 vs BSS123 |