Part Details for BSS123-7 by Diodes Incorporated
Overview of BSS123-7 by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSS123-7
Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 11 |
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$0.3800 / $0.5800 | Buy Now |
Part Details for BSS123-7
BSS123-7 CAD Models
BSS123-7 Part Data Attributes
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BSS123-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
BSS123-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Package Description | SOT-23, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSS123-7
This table gives cross-reference parts and alternative options found for BSS123-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS123LT3 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN | onsemi | BSS123-7 vs BSS123LT3 |
Q62702-S512 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Infineon Technologies AG | BSS123-7 vs Q62702-S512 |
BSS123E6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Siemens | BSS123-7 vs BSS123E6433 |
BSS123E-6327 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN | Siemens | BSS123-7 vs BSS123E-6327 |
BSS123TA | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Zetex / Diodes Inc | BSS123-7 vs BSS123TA |
BSS123 | Small Signal Field-Effect Transistor, | Galaxy Microelectronics | BSS123-7 vs BSS123 |
BSS123L6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123-7 vs BSS123L6433 |
BSS123LT1 | Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL | onsemi | BSS123-7 vs BSS123LT1 |
BSS123LT3 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Motorola Mobility LLC | BSS123-7 vs BSS123LT3 |
BSS123-13 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | BSS123-7 vs BSS123-13 |