Part Details for BSP315PH6327XTSA1 by Infineon Technologies AG
Results Overview of BSP315PH6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
BSP315PH6327XTSA1 Information
BSP315PH6327XTSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSP315PH6327XTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
68AC4419
|
Newark | Mosfet, P-Ch, 60V, 1.17A, Sot-223, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuo... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 215 |
|
$0.2810 | Buy Now |
|
DISTI #
87AK5510
|
Newark | Mosfet, P-Ch, 1.17A, Sot-223-4 Rohs Compliant: Yes |Infineon BSP315PH6327XTSA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3330 / $0.3370 | Buy Now |
|
DISTI #
BSP315PH6327XTSA1CT-ND
|
DigiKey | MOSFET P-CH 60V 1.17A SOT223-4 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18730 In Stock |
|
$0.2033 / $0.9000 | Buy Now |
|
DISTI #
BSP315PH6327XTSA1
|
Avnet Americas | Power MOSFET, P Channel, 60 V, 1.17 A, 800 Milliohms, SOT-223, 4 Pins, Surface Mount - Tape and Reel... more RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 1 Days Container: Reel |
2000 |
|
$0.1463 / $0.1556 | Buy Now |
|
DISTI #
68AC4419
|
Avnet Americas | Power MOSFET, P Channel, 60 V, 1.17 A, 800 Milliohms, SOT-223, 4 Pins, Surface Mount - Product that ... more RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack |
215 Partner Stock |
|
$0.5050 / $1.0000 | Buy Now |
|
DISTI #
726-BSP315PH6327XTSA
|
Mouser Electronics | MOSFETs P-Ch -60V -1.17A SOT-223-3 RoHS: Compliant | 7302 |
|
$0.2140 / $0.8600 | Buy Now |
|
|
Future Electronics | Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel |
81000 Reel |
|
$0.1740 / $0.1850 | Buy Now |
|
|
Future Electronics | Single P-Channel 60 V 0.8 Ohm 5.2 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel |
0 Reel |
|
$0.1740 / $0.1850 | Buy Now |
|
DISTI #
BSP315PH6327XTSA1
|
TME | Transistor: P-MOSFET, unipolar, -60V, -1.17A, 1.8W, PG-SOT223 Min Qty: 1 | 1584 |
|
$0.2400 / $0.8280 | Buy Now |
|
|
Ameya Holding Limited | Transistor: P-MOSFET, unipolar, -60V, -1.17A, 1.8W, PG-SOT223 | 150 |
|
Buy Now RFQ |
Part Details for BSP315PH6327XTSA1
BSP315PH6327XTSA1 CAD Models
BSP315PH6327XTSA1 Part Data Attributes
|
|
BSP315PH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSP315PH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Select a part to compare: |
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.17 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 4.68 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |