Part Details for BSP295L6327HTSA1 by Infineon Technologies AG
Overview of BSP295L6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP295L6327HTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BSP295 - SIPMOS Small-Signal N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 308409 |
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$0.3099 / $0.3646 | Buy Now |
Part Details for BSP295L6327HTSA1
BSP295L6327HTSA1 CAD Models
BSP295L6327HTSA1 Part Data Attributes:
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BSP295L6327HTSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSP295L6327HTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.8 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 7.2 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP295L6327HTSA1
This table gives cross-reference parts and alternative options found for BSP295L6327HTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP295L6327HTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP295 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOT-223, 4 PIN | Infineon Technologies AG | BSP295L6327HTSA1 vs BSP295 |
BSP295E6327 | Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP295L6327HTSA1 vs BSP295E6327 |
BSP295 | Power Field-Effect Transistor, 1.7A I(D), 50V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP295L6327HTSA1 vs BSP295 |
BSP295L6327 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP295L6327HTSA1 vs BSP295L6327 |
BSP295E-6327 | 1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Infineon Technologies AG | BSP295L6327HTSA1 vs BSP295E-6327 |
BSP295E-6327 | 1.8A, 50V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP295L6327HTSA1 vs BSP295E-6327 |
BSP295L6327XT | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP295L6327HTSA1 vs BSP295L6327XT |