Datasheets
BSP250 by:

TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power

Part Details for BSP250 by NXP Semiconductors

Overview of BSP250 by NXP Semiconductors

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Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Price & Stock for BSP250

Part # Distributor Description Stock Price Buy
ComSIT USA Transistor RoHS: Compliant Europe - 785
RFQ
NexGen Digital   1
RFQ
Chip 1 Exchange INSTOCK 1000
RFQ
Chip1Cloud Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 / MOSFET P-CH 30V 3A SOT223 2300
RFQ

Part Details for BSP250

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BSP250 Part Data Attributes

BSP250 NXP Semiconductors
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BSP250 NXP Semiconductors TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-73, 4 PIN, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SC-73
Package Description PLASTIC, SMD, SC-73, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer NXP
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 5 W
Power Dissipation-Max (Abs) 1.65 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for BSP250

This table gives cross-reference parts and alternative options found for BSP250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP250 Power Field-Effect Transistor Nexperia BSP250 vs BSP250
BSP250,135 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia BSP250 vs BSP250,135
BSP250-T TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250 vs BSP250-T
BSP250-T Power Field-Effect Transistor Nexperia BSP250 vs BSP250-T
934033450115 Power Field-Effect Transistor Nexperia BSP250 vs 934033450115
BSP250/T3 TRANSISTOR 3 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250 vs BSP250/T3
BSP250-TAPE-13 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250 vs BSP250-TAPE-13
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET@en-us SC-73 4-Pin Nexperia BSP250 vs BSP250,115
BSP250,115 BSP250 - P-channel vertical D-MOS intermediate level FET SC-73 4-Pin NXP Semiconductors BSP250 vs BSP250,115
934033450135 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250 vs 934033450135
Part Number Description Manufacturer Compare
NDT456P Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP250 vs NDT456P
934033450135 TRANSISTOR 3 A, 30 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors BSP250 vs 934033450135
BSP250-T Power Field-Effect Transistor Nexperia BSP250 vs BSP250-T
FDT458P_NL Power Field-Effect Transistor, 3.4A I(D), 30V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP250 vs FDT458P_NL
FX30ASJ-03 Power Field-Effect Transistor, 30A I(D), 30V, 0.061ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Mitsubishi Electric BSP250 vs FX30ASJ-03
NDT454P P-Channel Enhancement Mode Field Effect Transistor -30V, -5.9A, 50mΩ, 4000-REEL onsemi BSP250 vs NDT454P
NDT452AP 5A, 30V, 0.065ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC BSP250 vs NDT452AP
NDT452APJ23Z Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Fairchild Semiconductor Corporation BSP250 vs NDT452APJ23Z
FDT458P -30V P-Channel PowerTrench® MOSFET, MOLDED PACKAGE, SOT-223, 4 LEAD, 4000/TAPE REEL Fairchild Semiconductor Corporation BSP250 vs FDT458P
NDT452AP P-Channel Enhancement Mode Field Effect Transistor -30V, -5A, 65mΩ, 4000-REEL onsemi BSP250 vs NDT452AP

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