Part Details for BSP179H6327XTSA1 by Infineon Technologies AG
Overview of BSP179H6327XTSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for BSP179H6327XTSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BSP179 - SIPMOS, Small Signal N-Channel MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 41068 |
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$0.3771 / $0.4436 | Buy Now |
Part Details for BSP179H6327XTSA1
BSP179H6327XTSA1 CAD Models
BSP179H6327XTSA1 Part Data Attributes
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BSP179H6327XTSA1
Infineon Technologies AG
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Datasheet
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BSP179H6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 0.21A I(D), 400V, 18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-223, 4 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Infineon | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 0.21 A | |
Drain-source On Resistance-Max | 18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 9 pF | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.8 W | |
Power Dissipation-Max (Abs) | 1.8 W | |
Pulsed Drain Current-Max (IDM) | 0.83 A | |
Reference Standard | AEC-Q100; IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 127 ns | |
Turn-on Time-Max (ton) | 22.3 ns |