Part Details for BSP170P by Siemens
Overview of BSP170P by Siemens
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSP170P
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) | 208000 |
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RFQ | |
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Win Source Electronics | SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) | 136000 |
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$0.5470 / $0.8200 | Buy Now |
Part Details for BSP170P
BSP170P CAD Models
BSP170P Part Data Attributes:
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BSP170P
Siemens
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Datasheet
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BSP170P
Siemens
Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.9 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 7.6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON |
Alternate Parts for BSP170P
This table gives cross-reference parts and alternative options found for BSP170P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP170P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFT1P06E | Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | BSP170P vs RFT1P06E |
IRFL9014 | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | International Rectifier | BSP170P vs IRFL9014 |
IRFL9014TR | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | International Rectifier | BSP170P vs IRFL9014TR |
RFT1P06E | 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET | Intersil Corporation | BSP170P vs RFT1P06E |
IRFL9014TRPBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | International Rectifier | BSP170P vs IRFL9014TRPBF |
NDT2955 | P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL | onsemi | BSP170P vs NDT2955 |
IRFL9014PBF | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 | International Rectifier | BSP170P vs IRFL9014PBF |
NDT2955 | 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET | Rochester Electronics LLC | BSP170P vs NDT2955 |
BSP613P | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP170P vs BSP613P |