Datasheets
BSP170P by:

Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BSP170P by Siemens

Overview of BSP170P by Siemens

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Applications Healthcare

Price & Stock for BSP170P

Part # Distributor Description Stock Price Buy
Chip1Cloud SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 208000
RFQ
Win Source Electronics SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 136000
  • 65 $0.8200
  • 150 $0.6730
  • 235 $0.6520
  • 320 $0.6310
  • 410 $0.6100
  • 550 $0.5470
$0.5470 / $0.8200 Buy Now

Part Details for BSP170P

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BSP170P Part Data Attributes:

BSP170P Siemens
Buy Now Datasheet
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BSP170P Siemens Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 70 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 7.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSP170P

This table gives cross-reference parts and alternative options found for BSP170P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP170P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFT1P06E Power Field-Effect Transistor, 1.4A I(D), 60V, 0.285ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation BSP170P vs RFT1P06E
IRFL9014 Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier BSP170P vs IRFL9014
IRFL9014TR Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA International Rectifier BSP170P vs IRFL9014TR
RFT1P06E 1.4A, 60V, 0.285ohm, P-CHANNEL, Si, POWER, MOSFET Intersil Corporation BSP170P vs RFT1P06E
IRFL9014TRPBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, International Rectifier BSP170P vs IRFL9014TRPBF
NDT2955 P-Channel Enhancement Mode Field Effect Transistor -60V, -2.5A, 300mΩ, 4000-REEL onsemi BSP170P vs NDT2955
IRFL9014PBF Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier BSP170P vs IRFL9014PBF
NDT2955 2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET Rochester Electronics LLC BSP170P vs NDT2955
BSP613P Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN Infineon Technologies AG BSP170P vs BSP613P

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