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Transistors / Power Field-Effect Transistors / BSP135H6327
Datasheets
BSP135H6327 by: Infineon Technologies AG

Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Details for BSP135H6327 by Infineon Technologies AG

Results Overview of BSP135H6327 by Infineon Technologies AG

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BSP135H6327 Information

BSP135H6327 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSP135H6327

Part # Distributor Description Stock Price Buy
ComSIT USA Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide S... emiconductor FET more RoHS: Compliant ECCN: EAR99 Stock DE - 2260
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
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Vyrian Transistors 85360
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Part Details for BSP135H6327

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BSP135H6327 Part Data Attributes

Parametric Data
BSP135H6327 Infineon Technologies AG
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BSP135H6327 Infineon Technologies AG Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.12 A
Drain-source On Resistance-Max 45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 0.48 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

BSP135H6327 Related Parts

BSP135H6327 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.

  • When selecting a gate driver for the BSP135H6327, consider the driver's output current capability, voltage rating, and propagation delay. Infineon recommends using their EiceDRIVER or 1EDC gate driver families, which are specifically designed for their IGBT modules.

  • The BSP135H6327 has an internal overcurrent protection feature, but it's still important to implement external protection measures. The maximum allowed overcurrent is typically 2-3 times the nominal current rating. Use a fast-acting fuse or a current sensor with a shutdown circuit to protect the module from overcurrent conditions.

  • To ensure reliable operation in high-temperature environments, follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and cooling system implementation. Additionally, consider derating the module's current rating according to the temperature derating curve provided in the datasheet.

  • Handle the BSP135H6327 with care to prevent mechanical damage and electrostatic discharge (ESD). Store the modules in their original packaging, away from direct sunlight and moisture. Follow Infineon's recommended storage and handling procedures outlined in their packaging and labeling guidelines.