Datasheets
BSP135E6327 by:
Infineon Technologies AG
Infineon Technologies AG
Siemens
Not Found

Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for BSP135E6327 by Infineon Technologies AG

Overview of BSP135E6327 by Infineon Technologies AG

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Part Details for BSP135E6327

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BSP135E6327 Part Data Attributes

BSP135E6327 Infineon Technologies AG
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BSP135E6327 Infineon Technologies AG Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-223
Package Description SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 60 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 0.3 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSP135E6327

This table gives cross-reference parts and alternative options found for BSP135E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP135E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSP135 Siemens Check for Price Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E6327 vs BSP135
BSP135 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN BSP135E6327 vs BSP135
Part Number Manufacturer Composite Price Description Compare
BSP135E-6327 Siemens Check for Price 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN BSP135E6327 vs BSP135E-6327
BSP135L6906 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E6327 vs BSP135L6906
BSP135E6906 Siemens Check for Price Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E6327 vs BSP135E6906
BSP88L6327 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E6327 vs BSP88L6327
BSP129E7941 Siemens Check for Price Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E6327 vs BSP129E7941
BSP88 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN BSP135E6327 vs BSP88
BSP300L6327 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E6327 vs BSP300L6327
BSP129 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN BSP135E6327 vs BSP129
BSP129E-6327 Infineon Technologies AG Check for Price 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN BSP135E6327 vs BSP129E-6327
BSP125 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN BSP135E6327 vs BSP125

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