Part Details for BSO303P by Infineon Technologies AG
Overview of BSO303P by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSO303P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSO303P
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Avnet Americas | Transistor MOSFET Array Dual P-CH 30V 8.2A 8-Pin SOIC - Tape and Reel (Alt: BSO303P) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 41 Partner Stock |
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RFQ | |
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Rochester Electronics | BSO303 - 20V-250V P-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 41 |
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$0.5082 / $0.5979 | Buy Now |
Part Details for BSO303P
BSO303P CAD Models
BSO303P Part Data Attributes
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BSO303P
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSO303P
Infineon Technologies AG
Power Field-Effect Transistor, 8.2A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 97 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 235 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 32.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSO303P
This table gives cross-reference parts and alternative options found for BSO303P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO303P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7328 | Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | BSO303P vs IRF7328 |
IRF7328PBF | Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | BSO303P vs IRF7328PBF |
BSO303PH | Power Field-Effect Transistor, 7A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 | Infineon Technologies AG | BSO303P vs BSO303PH |