Datasheets
BSO303P by:

Power Field-Effect Transistor, 8.2A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

Part Details for BSO303P by Infineon Technologies AG

Overview of BSO303P by Infineon Technologies AG

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Price & Stock for BSO303P

Part # Distributor Description Stock Price Buy
DISTI # BSO303P
Avnet Americas Transistor MOSFET Array Dual P-CH 30V 8.2A 8-Pin SOIC - Tape and Reel (Alt: BSO303P) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 41 Partner Stock
RFQ
Rochester Electronics BSO303 - 20V-250V P-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 41
  • 1 $0.5979
  • 25 $0.5859
  • 100 $0.5620
  • 500 $0.5381
  • 1,000 $0.5082
$0.5082 / $0.5979 Buy Now

Part Details for BSO303P

BSO303P CAD Models

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BSO303P Part Data Attributes

BSO303P Infineon Technologies AG
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BSO303P Infineon Technologies AG Power Field-Effect Transistor, 8.2A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 97 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 32.4 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSO303P

This table gives cross-reference parts and alternative options found for BSO303P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO303P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7328 Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier BSO303P vs IRF7328
IRF7328PBF Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG BSO303P vs IRF7328PBF
BSO303PH Power Field-Effect Transistor, 7A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG BSO303P vs BSO303PH

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