Datasheets
BSO080P03SHXUMA1 by:

Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8

Part Details for BSO080P03SHXUMA1 by Infineon Technologies AG

Overview of BSO080P03SHXUMA1 by Infineon Technologies AG

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for BSO080P03SHXUMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y1818
Newark Mosfet Transistor, P Channel, -12.6 A, -30 V, 0.0067 Ohm, -10 V, -1.5 V Rohs Compliant: Yes |Infineon BSO080P03SHXUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2292
  • 1 $2.0700
  • 10 $1.7400
  • 25 $1.6400
  • 50 $1.5300
  • 100 $1.4200
  • 250 $1.3300
  • 500 $1.2200
  • 1,000 $1.0600
$1.0600 / $2.0700 Buy Now
DISTI # BSO080P03SHXUMA1CT-ND
DigiKey MOSFET P-CH 30V 12.6A 8DSO Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4212
In Stock
  • 1 $1.8500
  • 10 $1.5390
  • 100 $1.2250
  • 500 $1.0366
  • 1,000 $0.8795
  • 2,500 $0.8355
  • 5,000 $0.8041
  • 12,500 $0.7775
$0.7775 / $1.8500 Buy Now
DISTI # BSO080P03SHXUMA1
Avnet Americas Trans MOSFET P-CH 30V 12.6A 8-Pin DSO T/R - Tape and Reel (Alt: BSO080P03SHXUMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8552
  • 5,000 $0.8293
  • 10,000 $0.8034
  • 15,000 $0.7774
  • 20,000 $0.7515
  • 25,000 $0.7256
  • 250,000 $0.6997
$0.6997 / $0.8552 Buy Now
Future Electronics Single P-Channel 30 V 8 mOhm 102 nC OptiMOS™ Power Mosfet - DSO-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8200
  • 5,000 $0.7900
$0.7900 / $0.8200 Buy Now
Future Electronics Single P-Channel 30 V 8 mOhm 102 nC OptiMOS™ Power Mosfet - DSO-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8200
  • 5,000 $0.7900
$0.7900 / $0.8200 Buy Now
Future Electronics Single P-Channel 30 V 8 mOhm 102 nC OptiMOS™ Power Mosfet - DSO-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.8250
  • 5,000 $0.8050
  • 7,500 $0.7900
$0.7900 / $0.8250 Buy Now
DISTI # BSO080P03SHXUMA1
Avnet Americas Trans MOSFET P-CH 30V 12.6A 8-Pin DSO T/R - Tape and Reel (Alt: BSO080P03SHXUMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8552
  • 5,000 $0.8293
  • 10,000 $0.8034
  • 15,000 $0.7774
  • 20,000 $0.7515
  • 25,000 $0.7256
  • 250,000 $0.6997
$0.6997 / $0.8552 Buy Now
DISTI # BSO080P03SHXUMA1
TME Transistor: P-MOSFET, unipolar, -30V, -12.6A, 1.79W, PG-DSO-8 Min Qty: 1 0
  • 1 $1.6200
  • 3 $1.4400
  • 10 $1.2900
  • 100 $1.1200
  • 500 $1.0100
$1.0100 / $1.6200 RFQ
Ameya Holding Limited   Min Qty: 5 100
  • 5 $1.4879
  • 50 $1.2382
  • 100 $1.1436
  • 250 $1.1072
  • 1,000 $1.0975
$1.0975 / $1.4879 Buy Now
DISTI # SP000613798
EBV Elektronik Trans MOSFET P-CH 30V 12.6A 8-Pin DSO T/R (Alt: SP000613798) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSO080P03SHXUMA1

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BSO080P03SHXUMA1 Part Data Attributes:

BSO080P03SHXUMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSO080P03SHXUMA1 Infineon Technologies AG Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 248 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 12.6 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.79 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BSO080P03SHXUMA1

This table gives cross-reference parts and alternative options found for BSO080P03SHXUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO080P03SHXUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMG4413LSS-13 Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Diodes Incorporated BSO080P03SHXUMA1 vs DMG4413LSS-13
BSO080P03NS3EG Power Field-Effect Transistor, 9.8A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 Infineon Technologies AG BSO080P03SHXUMA1 vs BSO080P03NS3EG

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