Part Details for BSM75GB60DLCHOSA1 by Infineon Technologies AG
Overview of BSM75GB60DLCHOSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSM75GB60DLCHOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BSM75GB60 - Insulated Gate Bipolar Transistor Module ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 10 |
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$48.0800 / $56.5600 | Buy Now |
Part Details for BSM75GB60DLCHOSA1
BSM75GB60DLCHOSA1 CAD Models
BSM75GB60DLCHOSA1 Part Data Attributes
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BSM75GB60DLCHOSA1
Infineon Technologies AG
Buy Now
Datasheet
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BSM75GB60DLCHOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 205 ns | |
| Turn-on Time-Nom (ton) | 90 ns |
Alternate Parts for BSM75GB60DLCHOSA1
This table gives cross-reference parts and alternative options found for BSM75GB60DLCHOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM75GB60DLCHOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CM150DY-12H | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | BSM75GB60DLCHOSA1 vs CM150DY-12H |
| MG150H2YS1 | TRANSISTOR 150 A, 500 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM75GB60DLCHOSA1 vs MG150H2YS1 |
| 1MBI600NN-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 | Fuji Electric Co Ltd | BSM75GB60DLCHOSA1 vs 1MBI600NN-060 |
| 2MBI100L-060 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN | Fuji Electric Co Ltd | BSM75GB60DLCHOSA1 vs 2MBI100L-060 |
| CM300DU-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | BSM75GB60DLCHOSA1 vs CM300DU-12H |
| 2MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN | Fuji Electric Co Ltd | BSM75GB60DLCHOSA1 vs 2MBI300L-060 |
| BSM50GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, MOUDLE-7 | Infineon Technologies AG | BSM75GB60DLCHOSA1 vs BSM50GB60DLCHOSA1 |
| CM300HA-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | BSM75GB60DLCHOSA1 vs CM300HA-12H |
| MG300H1US1 | TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM75GB60DLCHOSA1 vs MG300H1US1 |
| 1MBI400L-060 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | BSM75GB60DLCHOSA1 vs 1MBI400L-060 |