Datasheets
BSM75GAR120DN2 by:
Eupec Gmbh & Co Kg
Eupec Gmbh & Co Kg
Infineon Technologies AG
Rochester Electronics LLC
Not Found

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,

Part Details for BSM75GAR120DN2 by Eupec Gmbh & Co Kg

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BSM75GAR120DN2 Information

BSM75GAR120DN2 by Eupec Gmbh & Co Kg is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BSM75GAR120DN2

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BSM75GAR120DN2 Part Data Attributes

BSM75GAR120DN2 Eupec Gmbh & Co Kg
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BSM75GAR120DN2 Eupec Gmbh & Co Kg Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,
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Part Life Cycle Code Transferred
Ihs Manufacturer EUPEC GMBH & CO KG
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 75 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON

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