Datasheets
BSM682F by:

Power Field-Effect Transistor, 10A I(D), 800V, 0.95ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for BSM682F by Siemens

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Part Details for BSM682F

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BSM682F Part Data Attributes

BSM682F Siemens
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BSM682F Siemens Power Field-Effect Transistor, 10A I(D), 800V, 0.95ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description FLANGE MOUNT, R-PUFM-D17
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 250 pF
JESD-30 Code R-PUFM-D17
Number of Elements 6
Number of Terminals 17
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 225 W
Power Dissipation-Max (Abs) 225 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form SOLDER LUG
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 570 ns
Turn-on Time-Max (ton) 230 ns

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