Datasheets
BSM50GB120DN2 by:

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for BSM50GB120DN2 by Infineon Technologies AG

Overview of BSM50GB120DN2 by Infineon Technologies AG

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Part Details for BSM50GB120DN2

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BSM50GB120DN2 Part Data Attributes

BSM50GB120DN2 Infineon Technologies AG
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BSM50GB120DN2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-7
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 78 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 450 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3.2 V

Alternate Parts for BSM50GB120DN2

This table gives cross-reference parts and alternative options found for BSM50GB120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM50GB120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM50GB120DN2HOSA1 Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Infineon Technologies AG BSM50GB120DN2 vs BSM50GB120DN2HOSA1
Part Number Description Manufacturer Compare
2MBI25L-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M218, 7 PIN Fuji Electric Co Ltd BSM50GB120DN2 vs 2MBI25L-120
CM75DY-24H Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, Mitsubishi Electric BSM50GB120DN2 vs CM75DY-24H
CM50DY-24H Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors BSM50GB120DN2 vs CM50DY-24H
MG75Q2YS11 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM50GB120DN2 vs MG75Q2YS11
CM50DU-24F Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors BSM50GB120DN2 vs CM50DU-24F
MG50N2YS1 TRANSISTOR 50 A, 1000 V, N-CHANNEL IGBT, 2-94C1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM50GB120DN2 vs MG50N2YS1
CM75DY-24H Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, Powerex Power Semiconductors BSM50GB120DN2 vs CM75DY-24H
BSM50GB100D Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7 Infineon Technologies AG BSM50GB120DN2 vs BSM50GB100D
MG50Q2YS50 TRANSISTOR 78 A, 1200 V, N-CHANNEL IGBT, 2-94D4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM50GB120DN2 vs MG50Q2YS50
MG75Q2YS40 TRANSISTOR 75 A, 1200 V, N-CHANNEL IGBT, 2-94D1A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM50GB120DN2 vs MG75Q2YS40

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