Part Details for BSM300GB120DLC by Infineon Technologies AG
Overview of BSM300GB120DLC by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM300GB120DLC
BSM300GB120DLC CAD Models
BSM300GB120DLC Part Data Attributes
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BSM300GB120DLC
Infineon Technologies AG
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Datasheet
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BSM300GB120DLC
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Pin Count | 7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 625 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2500 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 650 ns | |
Turn-on Time-Nom (ton) | 190 ns | |
VCEsat-Max | 2.6 V |
Alternate Parts for BSM300GB120DLC
This table gives cross-reference parts and alternative options found for BSM300GB120DLC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM300GB120DLC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSM100GB120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN | Infineon Technologies AG | BSM300GB120DLC vs BSM100GB120DN2 |
CM150DY-24T | Insulated Gate Bipolar Transistor, | Mitsubishi Electric | BSM300GB120DLC vs CM150DY-24T |
1MBI200SA-120 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Fuji Electric Co Ltd | BSM300GB120DLC vs 1MBI200SA-120 |
MG600Q1US59A | Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Mitsubishi Electric | BSM300GB120DLC vs MG600Q1US59A |
MG600Q1US65H | TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM300GB120DLC vs MG600Q1US65H |
2MBI150SC-120 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN | Fuji Electric Co Ltd | BSM300GB120DLC vs 2MBI150SC-120 |
MII150-12A4 | Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | BSM300GB120DLC vs MII150-12A4 |
MG100Q2YS50A | TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | BSM300GB120DLC vs MG100Q2YS50A |
APTGT200U120D4 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 | Microsemi Corporation | BSM300GB120DLC vs APTGT200U120D4 |
FZ400R12KS4 | Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM300GB120DLC vs FZ400R12KS4 |