Transistors IGBTs BSM25GB100D

BSM25GB100D by

Description: Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel,

Overview of BSM25GB100D by Siemens

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	Part #	Manufacturer	Description	Stock	Price	Buy
	BSM25GB100D	ComSIT USA	Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel RoHS: Not Compliant	Stock EU - 7 Stock US - 0 Stock MX - 0 Stock CN - 0 Stock HK - 0			RFQ

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Show differences only	BSM25GB100D Siemens Buy Now	part-to-be-compared Siemens Buy Now
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Part Life Cycle Code	Transferred
Ihs Manufacturer	SIEMENS A G
Package Description	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
ECCN Code	EAR99
HTS Code	8541.29.00.95
Case Connection	ISOLATED
Collector Current-Max (IC)	25 A
Collector-Emitter Voltage-Max	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	6.2 V
Gate-Emitter Voltage-Max	20 V
JESD-30 Code	R-PUFM-X7
Number of Elements	2
Number of Terminals	7
Operating Temperature-Max	150 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	300 W
Power Dissipation-Max (Abs)	225 W
Qualification Status	Not Qualified
Surface Mount	NO
Terminal Form	UNSPECIFIED
Terminal Position	UPPER
Transistor Application	POWER CONTROL
Transistor Element Material	SILICON
Turn-on Time-Max (ton)	40 ns
Turn-on Time-Nom (ton)	30 ns
VCEsat-Max	3.3 V

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