Part Details for BSM20GD60DLCE3224 by Infineon Technologies AG
Overview of BSM20GD60DLCE3224 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BSM20GD60DLCE3224
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSM20GD60DLCE3224-ND
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DigiKey | IGBT MODULE Min Qty: 10 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
15 In Stock |
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$32.5000 | Buy Now |
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Rochester Electronics | BSM20GD60 - Insulated Gate Bipolar Transistor Module ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 15 |
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$27.8900 / $32.8100 | Buy Now |
Part Details for BSM20GD60DLCE3224
BSM20GD60DLCE3224 CAD Models
BSM20GD60DLCE3224 Part Data Attributes
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BSM20GD60DLCE3224
Infineon Technologies AG
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Datasheet
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BSM20GD60DLCE3224
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, MODULE-17
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | MODULE | |
Package Description | MODULE-17 | |
Pin Count | 17 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 32 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 146 ns | |
Turn-on Time-Nom (ton) | 71 ns | |
VCEsat-Max | 2.45 V |