Datasheets
BSM200GA170DLCHOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel

Part Details for BSM200GA170DLCHOSA1 by Infineon Technologies AG

Results Overview of BSM200GA170DLCHOSA1 by Infineon Technologies AG

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BSM200GA170DLCHOSA1 Information

BSM200GA170DLCHOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSM200GA170DLCHOSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Obsolete Min Qty: 1 63
  • 1 $162.5100
  • 25 $159.2600
  • 100 $152.7600
  • 500 $146.2600
  • 1,000 $138.1300
$138.1300 / $162.5100 Buy Now
DISTI # SP000100712
EBV Elektronik Trans IGBT Module NCH 17kV 200A nom 1920W 4Pin 1064x614mm (Alt: SP000100712) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSM200GA170DLCHOSA1

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BSM200GA170DLCHOSA1 Part Data Attributes

BSM200GA170DLCHOSA1 Infineon Technologies AG
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BSM200GA170DLCHOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel
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Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 400 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 930 ns
Turn-on Time-Nom (ton) 200 ns

BSM200GA170DLCHOSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2019-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • To ensure reliable operation in high-temperature environments, it's essential to follow Infineon's guidelines for thermal management, including proper heat sink design, thermal interface material selection, and monitoring of junction temperature.

  • Infineon provides recommended gate drive circuits in their application note AN2019-02, which includes schematics and component values for optimal gate drive performance.

  • To protect the device from overvoltage and overcurrent conditions, it's recommended to use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit, such as those described in Infineon's application note AN2019-03.

  • Infineon recommends following the standard ESD handling and storage procedures for MOSFET devices, including the use of anti-static packaging, wrist straps, and ionizers to prevent electrostatic discharge damage.