Part Details for BSM150GAL120DN2 by Infineon Technologies AG
Overview of BSM150GAL120DN2 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSM150GAL120DN2
BSM150GAL120DN2 CAD Models
BSM150GAL120DN2 Part Data Attributes
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BSM150GAL120DN2
Infineon Technologies AG
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Datasheet
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BSM150GAL120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-7 | |
| Pin Count | 7 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 210 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 670 ns | |
| Turn-on Time-Nom (ton) | 300 ns | |
| VCEsat-Max | 3.2 V |
Alternate Parts for BSM150GAL120DN2
This table gives cross-reference parts and alternative options found for BSM150GAL120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM150GAL120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM150GAL120DN2 | Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM150GAL120DN2 vs BSM150GAL120DN2 |
| CM100E3U-24H | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | BSM150GAL120DN2 vs CM100E3U-24H |
| FD150R12RT4 | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM150GAL120DN2 vs FD150R12RT4 |
| CM100E3U-24H | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, | Powerex Power Semiconductors | BSM150GAL120DN2 vs CM100E3U-24H |
| APTGT200DA120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BSM150GAL120DN2 vs APTGT200DA120D3G |
| BSM200GAL120DL | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE | Eupec Gmbh & Co Kg | BSM150GAL120DN2 vs BSM200GAL120DL |
| BSM200GAL120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM150GAL120DN2 vs BSM200GAL120DN2 |
| BSM100GAL120DN2 | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM150GAL120DN2 vs BSM100GAL120DN2 |
| BSM200GAR120DN2 | Insulated Gate Bipolar Transistor, 290A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DN2 vs BSM200GAR120DN2 |
| FD200R12KE3HOSA1 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM150GAL120DN2 vs FD200R12KE3HOSA1 |