Part Details for BSM150GAL120D by Siemens
Overview of BSM150GAL120D by Siemens
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Part Details for BSM150GAL120D
BSM150GAL120D CAD Models
BSM150GAL120D Part Data Attributes
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BSM150GAL120D
Siemens
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Datasheet
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BSM150GAL120D
Siemens
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-PUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | CHOPPER SWITCH | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.2 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1250 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
VCEsat-Max | 3.3 V |