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Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
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BSM10GD120DN2
Infineon Technologies AG
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Datasheet
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BSM10GD120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ECONOPACK-17 | |
Pin Count | 17 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 15 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X17 | |
Number of Elements | 6 | |
Number of Terminals | 17 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 80 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 460 ns | |
Turn-on Time-Nom (ton) | 105 ns | |
VCEsat-Max | 3.2 V |
This table gives cross-reference parts and alternative options found for BSM10GD120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM10GD120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSM10GD120DN2E3224 | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM10GD120DN2 vs BSM10GD120DN2E3224 |
MWI15-12A7 | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, E2-PACK, SIXPACK-20 | Littelfuse Inc | BSM10GD120DN2 vs MWI15-12A7 |
BSM10GD120DN2 | Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel | Siemens | BSM10GD120DN2 vs BSM10GD120DN2 |