Datasheets
BSM100GD120DN2BOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39

Part Details for BSM100GD120DN2BOSA1 by Infineon Technologies AG

Overview of BSM100GD120DN2BOSA1 by Infineon Technologies AG

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Price & Stock for BSM100GD120DN2BOSA1

Part # Distributor Description Stock Price Buy
DISTI # BSM100GD120DN2BOSA
Avnet Americas Transistor IGBT Module N-CH 1200V 150A 20V Screw Mount Tray - Trays (Alt: BSM100GD120DN2BOSA) RoHS: Not Compliant Min Qty: 10 Package Multiple: 10 Container: Tray 0
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Part Details for BSM100GD120DN2BOSA1

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BSM100GD120DN2BOSA1 Part Data Attributes

BSM100GD120DN2BOSA1 Infineon Technologies AG
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BSM100GD120DN2BOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-39
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ECONOPACK-39
Pin Count 39
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-Emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-T39
Number of Elements 6
Number of Terminals 39
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 470 ns
Turn-on Time-Nom (ton) 240 ns

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