Datasheets
BSM100GB60DLC by:
Eupec Gmbh & Co Kg
Eupec Gmbh & Co Kg
Infineon Technologies AG
Not Found

Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel,

Part Details for BSM100GB60DLC by Eupec Gmbh & Co Kg

Overview of BSM100GB60DLC by Eupec Gmbh & Co Kg

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Part Details for BSM100GB60DLC

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BSM100GB60DLC Part Data Attributes

BSM100GB60DLC Eupec Gmbh & Co Kg
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BSM100GB60DLC Eupec Gmbh & Co Kg Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel,
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Part Life Cycle Code Transferred
Ihs Manufacturer EUPEC GMBH & CO KG
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 130 A
Collector-Emitter Voltage-Max 600 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 125 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 445 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
VCEsat-Max 2.45 V

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