Part Details for BSM100GB170DN2 by Infineon Technologies AG
Results Overview of BSM100GB170DN2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
BSM100GB170DN2 Information
BSM100GB170DN2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BSM100GB170DN2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000092012
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EBV Elektronik | Trans IGBT Module NCH 17kV 145A 7Pin 62mm (Alt: SP000092012) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for BSM100GB170DN2
BSM100GB170DN2 CAD Models
BSM100GB170DN2 Part Data Attributes
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BSM100GB170DN2
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSM100GB170DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Collector Current-Max (IC) | 145 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Power Dissipation-Max (Abs) | 1000 W | |
| VCEsat-Max | 3.9 V |
Alternate Parts for BSM100GB170DN2
This table gives cross-reference parts and alternative options found for BSM100GB170DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB170DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSM200GA170DN2S | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel | BSM100GB170DN2 vs BSM200GA170DN2S |
| BSM200GA170DN2 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 290A I(C), 1700V V(BR)CES, N-Channel | BSM100GB170DN2 vs BSM200GA170DN2 |
| CM400HA-34H | Powerex Power Semiconductors | Check for Price | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel | BSM100GB170DN2 vs CM400HA-34H |
| BSM300GA170DN2E3166 | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel | BSM100GB170DN2 vs BSM300GA170DN2E3166 |
| BSM150GB170DL | Eupec Gmbh & Co Kg | Check for Price | Insulated Gate Bipolar Transistor, 150A I(C), 1700V V(BR)CES, N-Channel, | BSM100GB170DN2 vs BSM150GB170DL |
| FF150R17KE4HOSA1 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 250A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | BSM100GB170DN2 vs FF150R17KE4HOSA1 |
| FF200R17KE4 | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 310A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | BSM100GB170DN2 vs FF200R17KE4 |
| BSM200GB170DLC | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, | BSM100GB170DN2 vs BSM200GB170DLC |
| MG360V1US41 | Toshiba America Electronic Components | Check for Price | TRANSISTOR 360 A, 1700 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | BSM100GB170DN2 vs MG360V1US41 |
| BSM300GA170DN2S | Siemens | Check for Price | Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel | BSM100GB170DN2 vs BSM300GA170DN2S |