Datasheets
BSM100GB120DN2K by:

Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel,

Part Details for BSM100GB120DN2K by Siemens

Overview of BSM100GB120DN2K by Siemens

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Part Details for BSM100GB120DN2K

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BSM100GB120DN2K Part Data Attributes

BSM100GB120DN2K Siemens
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BSM100GB120DN2K Siemens Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel,
Part Life Cycle Code Obsolete
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 145 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-CUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1400 W
Qualification Status Not Qualified
Rise Time-Max (tr) 160 ns
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Element Material SILICON
Turn-off Time-Max (toff) 600 ns
Turn-off Time-Nom (toff) 400 ns
Turn-on Time-Max (ton) 260 ns
Turn-on Time-Nom (ton) 130 ns
VCEsat-Max 3 V

Alternate Parts for BSM100GB120DN2K

This table gives cross-reference parts and alternative options found for BSM100GB120DN2K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB120DN2K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM100GB120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN Infineon Technologies AG BSM100GB120DN2K vs BSM100GB120DN2
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric BSM100GB120DN2K vs CM150DY-24T
1MBI200SA-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd BSM100GB120DN2K vs 1MBI200SA-120
MG600Q1US59A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric BSM100GB120DN2K vs MG600Q1US59A
MG600Q1US65H TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG600Q1US65H
2MBI150SC-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN Fuji Electric Co Ltd BSM100GB120DN2K vs 2MBI150SC-120
MII150-12A4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Littelfuse Inc BSM100GB120DN2K vs MII150-12A4
MG100Q2YS50A TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG100Q2YS50A
APTGT200U120D4 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation BSM100GB120DN2K vs APTGT200U120D4
FZ400R12KS4 Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM100GB120DN2K vs FZ400R12KS4

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