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Transistors / IGBTs / BSM100GB120DN2K
Datasheets
BSM100GB120DN2K by:

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

Part Details for BSM100GB120DN2K by Infineon Technologies AG

Overview of BSM100GB120DN2K by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for BSM100GB120DN2K

Part # Distributor Description Stock Price Buy
Chip1Cloud Trans IGBT Module N-CH 1200V 145A 700000mW 7-Pin 34MM-1 120000
RFQ
MacroQuest Electronics   19
RFQ

Part Details for BSM100GB120DN2K

BSM100GB120DN2K Part Data Attributes

Parametric Data
BSM100GB120DN2K Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSM100GB120DN2K Infineon Technologies AG Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Pin Count 7
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 145 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Voltage-Max 20 V
Number of Elements 1
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 700 W
VCEsat-Max 3.2 V

Alternate Parts for BSM100GB120DN2K

This table gives cross-reference parts and alternative options found for BSM100GB120DN2K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM100GB120DN2K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM100GB120DN2 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN Infineon Technologies AG BSM100GB120DN2K vs BSM100GB120DN2
CM150DY-24T Insulated Gate Bipolar Transistor, Mitsubishi Electric BSM100GB120DN2K vs CM150DY-24T
1MBI200SA-120 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel Fuji Electric Co Ltd BSM100GB120DN2K vs 1MBI200SA-120
MG600Q1US59A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Mitsubishi Electric BSM100GB120DN2K vs MG600Q1US59A
MG600Q1US65H TRANSISTOR 600 A, 1200 V, N-CHANNEL IGBT, 2-109F1A, 4 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG600Q1US65H
2MBI150SC-120 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, M233, 7 PIN Fuji Electric Co Ltd BSM100GB120DN2K vs 2MBI150SC-120
MII150-12A4 Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 Littelfuse Inc BSM100GB120DN2K vs MII150-12A4
MG100Q2YS50A TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, 2-95A4A, 7 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM100GB120DN2K vs MG100Q2YS50A
APTGT200U120D4 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation BSM100GB120DN2K vs APTGT200U120D4
FZ400R12KS4 Insulated Gate Bipolar Transistor, 510A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM100GB120DN2K vs FZ400R12KS4

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